Workshops

IMS/RFIC2009 Workshop “Hopping” Policy:
You may sample the talks in any workshop during the time you are registered for a workshop.
You need to start in the workshop you signed up for and you cannot hop to another workshop until after the first 30 minutes of the workshop. In other words, you may workshop hop between workshops on Monday morning if you are registered for one of the Monday morning workshops. However, only registered attendees for a given workshop will receive the printed copy and electronic copy (CD) of the notes for that workshop.

CLICK ON THE TITLES BELOW TO DOWLOAD A COMPLETE WORKSHOP DESCRIPTION INCLUDING SPEAKER ABSTRACTS

WSA (RFIC) Sunday 08:00 – 17:00 BCEC Room 156AB
Advances in CMOS RF Power Amplifiers for Cellular and IEEE 802 Connectivity Radios [pdf]
Full-day workshop reviewed by RFIC.

Organizer(s):
Malcolm Smith, Amalfi Semiconductor.
Upkar Dhaliwal, Future Wireless Technologies; MTT-20.
Stewart Taylor, Intel.

This workshop will present the latest design and developments in RF Module/RFIC power amplifiers, as well as covering the RF system requirements for Cellular and IEEE 802 connectivity power amplifiers. Until very recently CMOS power amplifiers were not mature enough to compete against other non-silicon technologies and could not be used widely in handheld cell-phones. With some new developments in device technologies, circuit solutions as well as system-level improvements, several companies have announced CMOS power amplifiers products with the ability to be used in mass-market handsets, PC cards, laptops and netbooks. Challenges remain in terms of output power, mismatch handling, thermal and DC performance for the power amplifier so that it may be integrated with the rest of the RF and in future with the baseband. This workshop will present and discuss the advantages, disadvantages and future of CMOS and silicon-based power amplifiers for Cellular (2G – GSM, EDGE, CDMA) (3G UMTS, HSDPA, DO1x) and IEEE 802 (WLAN/WiFi, WiMAX/WiBRO) connectivity power amplifiers.

Speakers:
1. Michael Bailey, Amalfi Semiconductor
“Utilizing Bulk CMOS Transistors for High Frequency Power Amplifiers”
2. Ali M. Niknejad, Berkeley Wireless Research Center (BWRC)
“Low Voltage Transformer Coupled CMOS PAs”
3. Rahul Magoon, Axiom Microdevices
“The Integration of Cellular CMOS PAs with RF, Mixed Signal, and Digital Circuits on a
Single Die Radio: Challenges and Opportunities”
4. Susanne Paul, Black Sand Technologies
“Class P Architectures in Linear 3G CMOS Power Amplifiers”
5. Bumman Kim, Pohang University of Science and Technology
“CMOS Linear Power Amplifier Design”
6. Antonino Scuderi, STMicroelectronics, Catania, Italy
“Multimode Digital CMOS PA for Polar Architectures”
7. Dan Nobbe, Peregrine Semiconductor
“Radio Frequency Front End Integration in UltraCMOS”
8. Peter Gammel, SiGe Semiconductor
”Power Amplifier Design Consideration for WLAN”
9. Chris D. Hull, Intel Corporation
”Wi-Max CMOS Power Amplifiers”

WSB (RFIC) Sunday 08:00 – 17:00 BCEC Room 151AB
Current and Future Trends in Frequency Generation Circuits [pdf]
Full-day workshop reviewed by RFIC.

Organizer(s):
Waleed Khalil, Intel; RFIC TPC.
Ahmed Helmy, Intel.

In order to adapt to the highly competitive IC market, chip suppliers are racing to reduce the total chip count by integrating many functionalities onto a single IC. However, one of the few elements that escaped this integration and remains to be off-chip is the timing source. In both wireless and wired systems, the reference source requires varying degrees of accuracy and stability over time and temperature. More often these accuracy requirements can only be met by using externally compensated reference sources such as (TCXOS) or (VCXOS), which occupy a large fraction of the board space. Hence a large emphasis is placed on eliminating these components by either integrating their functionality on- chip or replacing them with a much smaller footprint solution. This workshop will review various aspects in the design of stable and low phase noise oscillator circuits. Solutions that are gaining more popularity such as (DCXOS), MEMS and self-referenced oscillators will also be presented.

Speakers:
1. Michael M. Driscoll, Northrop Grumman
“Introduction to the Design and Performance of Quartz Crystal Oscillators”

2. Michael McCorquodale, Mobius Microsystems
“Self-Referenced CMOS Oscillators”

3. Ayman Ahmed, Si-Ware Systems
“Temperature Compensation Techniques of Crystal-less Reference Oscillators”
4. Justin Black, Harmonic Devices Inc.
“Emerging Piezoelectric MEMS Resonators for Clock Synthesis”

5. Eric Klumperink, University of Twente
“Recent Advances in Low-Jitter CMOS Clock Generation Stimulated by FoM Definitions”
6. Ning Zhang, University of Florida
“Millimeter-wave Signal Generation in CMOS”
7. Gennady Feygin, Texas Instruments
“Integrated Digitally-Controlled Crystal Oscillators for Cellular Systems in Deep Sub-micron CMOS”
8. Mona M Hella, Rensselaer Polytechnic Institute
“Recent Advances in Multi-Standard Oscillator Design”

WSC (RFIC) Sunday 08:00 – 17:00 BCEC Room 153AB
Advances in PA and Tx architectures [pdf]
Full-day workshop reviewed by RFIC.

Organizer(s):
Patrick Reynaert, K.U.Leuven, Belgium.
Dominique Schreurs, K.U.Leuven, Belgium; AdCom, TCC, MTT-11, IMS TPC.

Although most PA and TX architectures (Doherty, Polar, outphasing, LINC, ...) have been envisioned several decades ago, there is not a clear winner today. Technology considerations (GaN, CMOS, SiGe,...), system level considerations (output power, bandwidth,...), implementation and packaging issues and the specific cost or business model (basestations, terminals,...), make the optimal choice less obvious. This workshop will cover the different solutions that exist today for PA and TX architectures. It will discuss the different trade-offs and implementation issues of the various architectures, crucial information when selecting the architecture of choice. All speakers will also give an outlook of new PA architectures that are being developed in their field.

Speakers:
1. Steve C. Cripps, Cardiff University, United Kingdom
“Old Dogs and New Tricks in the Pursuit of Higher RFPA Efficiency”
2. John Gajadharsing, NXP, Netherlands
“Recent Advances in Doherty Amplifiers for Wireless Infrastructure”
3. Leo de Vreede, T.U.Delft, The Netherlands
“Enhanced LINC/Chireix Power Amplifiers”
4. Thomas Johnson, PulseWave RF, USA
“Carrier Frequency Switch Mode Amplification and Linearization”
5. Georg Fischer, University of Erlangen / Alcatel-Lucent, Germany
“Practical Design and Implementation Challenges of the Class-S PA”
6. Earl McCune, RF Communications Consulting, Santa Clara, CA, USA
“Polar Modulation and Power Amplifiers”
7. Patrick Reynaert, K.U.Leuven ESAT-MICAS, Belgium
“CMOS RF Power Amplifiers”
8. Gottfried Magerl, TU Vienna, Austria
“Class F Amplifiers”
9. Panel discussion with speakers and attendees

WSD (RFIC) Sunday 08:00 – 17:00 BCEC Room 157C
Self-Interference and Co-Habitation Considerations in Complex SoC and SiP Integrated Solutions [pdf]
Full-day workshop reviewed by RFIC.

Organizer(s):
Jan Niehof, NXP Semiconductors.
Oren Eytan Eliezer, Texas Instruments.
Paul Blount, Custom MMIC Design Services; RFIC TPC.

With the integration of RF, mixed signal and digital building blocks on a single die, combined with the trend of increased frequencies (both in the RF and in the digital circuitry), it is essential to consider various on-chip coupling effects in the early design phases of the RF SoC or SiP. Additionally, provisions should be made for mitigating the impact of peripheral interactions (e.g., package, antenna), as well as the potential for self- interference, such that these are either eliminated or can be resolved on the fabricated product without hardware redesign. The focus of this interactive workshop will be on resolving self-interference problems: on-chip coupling effects, chip-package co-design, substrate issues, coupling-aware RFIC floor planning, digitally assisted solutions for interference problems, design practices, modeling and CAD/EDA capabilities to address coupling effects. Recognized companies and partnerships active in the semiconductor industry will present actual issues encountered in their designs and the solutions/design-practices used to address them. Interactive discussions will be facilitated to exchange valuable ideas for the benefit of participants and the industry at large.

Speakers:
1. Jonathan Jensen, Intel
“Single Chip Radio Design; Thinking Beyond the Circuits and the Silicon”
2. Stephane Bronckers, IMEC
“A Novel Methodology to Predict the Impact of Substrate Noise in Complex Analog/RF Systems”
3. Scott Morris, RFMD
“Innovative Technique of Shielding for RF Applications at Package Level”
4. Matthias Locher, ST-Ericsson
“Bottom-up coexistence physical design and verification approach for multi standard SoC”
5. Nikos Haralabidis, Broadcom
“SoC System and Physical Design Approach for Co-Existence of Transceivers of Multiple Standards”
6. Oren Eliezer, Texas Instruments
“Software Assisted Radio Design to Compensate for Analog Impairments and for RF Interference Effects”
7. José Luis González, Universitat Politecnica de Catalunya
“Substrate Noise Interference in RF Integrated Circuits”
8. Francois Clement, Coupling Wave Solutions
“Electrical Signal Integrity Analysis in Mixed-Signal and RF ICs”
9. Jan Niehof, NXP Semiconductors
“Dealing with Physical Design Issues in Complex RF Applications”

WSE (RFIC) Sunday 08:00 – 17:00 BCEC Room 154
Advanced BAW-Enabled Wireless Transceivers: from Devices to System Architectures [pdf]
Full-day workshop reviewed by RFIC.

Organizer(s):
Andreas Kaiser, IEMN-ISEN.
Andreia Cathelin, ST Microelectronics.
Edgar Schmidhammer, EPCOS AG.

Bulk Acoustic Wave (BAW) resonators are now being used in functions such as filters or duplexers, namely for US-based PCS system. Key-advantages of this technology are reduced size and cost at good performance. This workshop will discuss recent advances in the technology and at the device level, such as zero temperature drift, multiple frequency bands on the same wafer, improved power durability, and increased quality factors. Combined with advanced packaging technologies, modules with high functionality can be realized. Beyond replacing other filtering technologies, BAW technology can have a significant impact on system architectures, and will allow novel approaches namely for low power radios. BAW resonators also have a strong potential as high-precision frequency references where they could advantageously replace quartz resonators for this purpose. All these points, as well as design tools and methodology, will be described by the speakers in this workshop.

Speakers:
1. Alexandre Reinhardt, CEA-LETI
“BAW Technology for Advanced RF Architectures”
2. Florin Constantinescu, Politehnica University Bucharest, Romania
“Circuit and Field Models of Power BAW Resonators”
3. Arto Nurmela, VTT
“Power Durability and Non-Linear Effects in BAW Resonators”
4. Jean-Baptiste David, CEA-LETI
“An Operant Methodology to Handle BAW Designs: Application to a WCDMA/UMTS Duplexer”
5. Eric Tournier, LAAS
“Phase Noise of FBAR/SMR Resonators - Application to Frequency Generation and Measurement”
6. Andreia Cathelin, STMicroelectronics
“BAW Enabled Advanced Digital RF Transmitter Architectures for Wireless Systems”
7. Alexandre Volatier, Triquint Semiconductor
“A High Performance PCS Front End Module Incorporating a BAW Duplexer and a Tri-Mode Power Amplifier for a Fully Integrated CDMA/WCDMA Transmit Module Solution”
8. Rich Ruby, Avago
“Future Extensions of FBAR Technology”
9. Brian Otis, University of Washington - Seattle
“Innovative Use of BAW Resonators in Low-Power Transceivers”

WSF (RFIC) Sunday 08:00 – 17:00 BCEC Room 157AB
Devices and Design Techniques for Advanced Handset/Mobile PAs [pdf]
Full-day workshop reviewed by RFIC.

Organizer(s):
Nick Cheng, Skyworks Solutions; RFIC TPC.
David Ngo, RF Micro Devices; RFIC TPC Co-Chair.

During the past decade, cellular handsets have moved from single-band, single-mode platforms to very complex multiband, multimode architectures that optimize carrier capacity flexibility, support numerous geographic air-interface standards and enable more multimedia features. The ever- increasing complexity in cellular handsets has been imposing more and more stringent requirements on power amplifiers. Advancements in both device technology and design techniques have been escalating in addressing critical issues such as efficiency, linearity, noise, harmonics, switching transient, to name a few. Several presentations in this workshop will cover future handset trends, requirements on advanced power amplifiers and choice of device technology. Furthermore, design techniques of linearization, efficiency enhancement, power detection and controls will be covered with design examples demonstrated on various technologies such as GaAs HBT, CMOS, Silicon-on-Insulator and Silicon Germanium.

Speakers:
1. Ville Vintola, Nokia
“Handset Trends and Advanced PA Requirements”
2. Peter Zampardi, Skyworks Solutions
“Device Technology for Handset Power Amplifiers”
3. R. Magoon, Axiom Microdevices,
“Fully Integrated CMOS PAs for the Handsets”
4. Ali Tombak, RFMD
“Highly Integrated Wireless Handset Front-End Modules Based on Bulk Silicon and Silicon-on-Insulator (SOI) Technologies”
5. Youngwoo Kwon, Seoul National University
“Low-Power PAE Enhancement for 3G Handset Power Amplifiers”
6. Donald Lie, Texas Tech University
“SiGe PA for WLAN/WiMax and Handset Applications”
7. Leo de Vreede, Delft University of Technology
“Out-Of-Band Linearization of Semiconductor Devices”
8. David Ripley, Skyworks Solutions
“Power Detection and Control for Handset Power Amplifiers”

WSG (RFIC) Sunday 08:00 – 17:00 BCEC Room 52A
Challenges for Future RF Integration [pdf]
Full-day workshop reviewed by RFIC.

Organizer(s):
Gernot Hueber, DICE GmbH & Co KG.
R. Bogdan Staszewski,TU Delft.
Stefan Heinen, RWTH Aachen University; MTT-23, RFIC TPC.

Current and future transceivers for mobile terminals are facing increasing complexity because of the markets demands for more standards, lower cost, lower power consumption, and higher data-rate. As a result, multi-band and multi-mode radios covering the diversity of communication standards impart unique challenges on the RF-transceiver design due to limitations in terms of reconfigurable RF components that meet the demanding cellular performance criteria at costs that are attractive for mass market applications. The focus of this workshop will be on the challenges the cellular standards pose on future transceiver integration, along with a thorough discussion of advanced techniques for receivers and transmitters towards integration in a SoC. Approaches include novel architectures, highly configurable analog circuitry, digitally assisted and enhanced analog/RF modules and the integration of digital signal processing into the traditionally purely analog front-end. However, the utilization of digital signal processing capabilities is in line with the ongoing trend towards SoCs in minimum-feature-sized CMOS in the cellular market. Moreover, advances in the field of RF front-end modules and novel analog signal processing architectures are covered to give a consolidated outlook on future concepts for cellular radios.

Speakers:
1. R. Bogdan Staszewski, TU Delft, The Netherlands
“Advances in Digital RF Architectures”
2. Bertan Bakkaloglu, Arizona State University, USA
“Reconfigurable Transmitters and Power Management”
3. Larry Larson, University of California, San Diego, USA
“Power Amplifier Integration Challenges for Highly Integrated Multi-Mode Transceivers”
4. Aarno Pärssinen, Nokia Research Center, Helsinki, Finland
“RF System and Architecture Challenges for Multi-Standard Mobile Devices”
5. Yann Deval, IMS Laboratory, Talence Cedex, France
“Toward Software Radio Receiver”
6. Sebastian Hoyos, Texas A&M University, USA
“Multi-Path Receivers Architectures for Wideband Multi-Standard Radios”
7. Ranjit Gharpurey, University of Texas at Austin, USA
“Interference Cancellation and Linearity Enhancement in Wireless Receiver Front-ends”
8. Geoff Dawe, BitWave Semiconductor, Lowell, MA USA
“Software Defined (Configured) Radio Transceivers”

WSH (RFIC) Sunday 08:00 – 12:00 BCEC Room 152
System-Level Design and Implementation of Gb/s 60GHz Radios [pdf]
Half-day workshop reviewed by RFIC.

Organizer(s):
Alberto Valdes Garcia, IBM Research, Yorktown Heights, NY, USA.
Su-Khiong Yong, Samsung Electronics, San Jose, CA, USA.

In recent years, the design of active and passive mm-wave components in general, and in the
60GHz band in particular, has become a center of gravity for academic and industrial research. The time has come to move beyond circuit components and fulfill the motivation for the development of this technology: the deployment of commercial solutions capable of delivering Gb/s wireless links in a variety of applications. A successful Gb/s 60GHz radio module is the result of holistic design. These contemporary systems push the boundary not only of RF design, but also of DSP techniques, and communication systems. This workshop brings to IMS-RFIC 2009 the experts leading the standards, design and system integration for 60GHz commercial solutions. The physical layer design and specifications for key applications, such as high-definition video and fast download, are covered considering both single-carrier and OFDM modulations. The pros and cons of each signaling scheme for different usage scenarios are analyzed. The impact of RF circuit non-idealities in these systems is also addressed. Full system implementation examples, including radio and baseband, are presented and illustrated with 60GHz end-to-end systems and link experiments. One of the specific challenges and opportunities of 60GHz is the directionality of the transmitted energy that can be enhanced and steered through the use of beamforming. While different RF implementations of phased-arrays are available in contemporary literature, the impact of beamforming on a high data rate communication system is less understood. This workshop will cover this crucial aspect from a system viewpoint. All of the presentations will address how these important aspects of 60GHz systems are addressed by the emerging standards such as the IEEE 802.15.3c 60GHz standard.

Speakers:
1. Alberto Valdes-Garcia, IBM Research, USA
“Introduction and Overview of 60GHz Standardization”
2. Yasunao Katayama, IBM Tokyo Research Laboratory. Japan
“End-to-end 60GHz Single-Carrier System Implementation and Link Experiments”
3. Su-Khiong Yong, Samsung Electronics, USA
“OFDM System Design for 60GHz High-Definition Video Applications”
4. Chang-Soon Choi, IHP Microelectronics GmbH, Germany
“60-GHz SiGe BiCMOS Radio and OFDM Baseband Implementation for Gbps WLAN Applications”
5. André Bourdoux, IMEC, Belgium
“Beamforming at 60GHz: Challenges and Solutions”

WSI (RFIC) Sunday 13:00 – 17:00 BCEC Room 152
Technology and Power Combining Techniques for Millimeter Wave Applications [pdf]
Half-day workshop reviewed by RFIC.

Organizer(s):
Didier Belot, STMicroelectronics; RFIC TPC.
Eric Kerhervé, IMS Lab.

This workshop highlights the difficulties in designing silicon power amplifiers at MMW and RF frequencies. The presentations will focus of the limitations of CMOS, BiCMOS, bipolar and other advanced silicon technologies. In a second part, innovative design approaches such as power-combining techniques will be discussed in order to address the drastic specifications of radio communications from mobile phone standards (GSM, UMTS, WIMAX, WLAN...) to MMW standards (60GHz WMAN, 77GHz radar ...).

Speakers:
1. Wilhelm Keusgen, Fraunhofer HHI, Berlin, Germany
“PAs for MMW Applications: A Comparison of Technologies and Achievements”
2. Christine Raynaud, STMicroelectronics - CEA LETI
“Advanced CMOS (sub-0.25µm) Technologies for RF and MMW PA”
3. Domine Leenaerts, NXP Semiconductors, Research
“Power Amplifier Design in CMOS Technology for Cellular and WLAN”
4. Debopriyo Chowdhury, University of California
“Matching Techniques from RF to MMW”
5. Ullrich Pfeiffer, University of Wuppertal
“Innovative Power Combining Structures for MMW PA”
6. Panel discussion

WSJ (RFIC) Sunday 08:00 – 12:00 BCEC Room 51
Active Radio Circuits for Bio & Medical Applications [pdf]
Half-day workshop reviewed by RFIC.

Organizer(s):
Jacques Rudell, University of Washington, Seattle, WA USA
Donhee Ham, Harvard University, Cambridge, MA USA
Brian Otis, University of Washington, Seattle, WA USA

Scientist and engineers have spent the better part of the last century developing more efficient radio circuits, systems and software for wireless communication. Recently, the scientific community has begun exploring the use of radio-frequency circuits for bio-medical applications. These bio-able radio circuits can be categorized into two sub-topics. The first is the use of radios to communicate sensed information from the human body to the outside world. The second is the use of traditional radio circuits for medical analysis. Two speakers in this workshop will explore using radio circuits for biomedical sensing and diagnosis, such as early-cancer detection and Protein and DNA analysis. Two additional speakers will describe current work on communication with radios links for body area networks (BAN) and implantable devices.

Speakers:
1. Arjang Hassibi, University of Texas, Austin, TX
”Challenges in CMOS Integrated Biosensors”
2. Brian P. Otis, University of Washington, Seattle, WA
“BANning Low Power Radio Design”
3. Joel L. Dawson, Massachusetts Institute of Technology, Cambridge, MA
“A New Architecture for Implantable Transceivers”
4. Donhee Ham, Harvard University, Cambridge, MA
“NMR-Based CMOS RF Biomolecular Sensor”

WSK (RFIC) Sunday 13:00 – 17:00 BCEC Room 156C
Digitally Assisted Analog and RF Circuits [pdf]
Half-day workshop reviewed by RFIC.

Organizer(s):
Joel L. Dawson, Massachusetts Institute of Technology.
Stewart Taylor, Intel.
Josie Ammer, Qualcomm.

The purpose of this workshop is to push forward the discipline of digitally assisted analog and RF design by taking a snapshot of the cutting-edge work going on in this field. Rather than hunt through the various journals and conference proceedings to piece together design trends, we offer attendees the chance to hear oral presentations from several of the leading experts in this young field. The workshop format is particularly advantageous for this topic, as in our view many of the breakthroughs in digitally assisted RF will find inspiration from similar work going on in analog design, and vice versa. Attendees will get a chance to hear about and ask questions concerning published work, and will also get a glimpse at cutting-edge but as-yet-unpublished work. Most importantly, attendees are encouraged to share their own thoughts and expertise concerning the techniques that are discussed. We expect the open exchange to benefit presenters and listeners alike.

Speakers:
1. Joel L. Dawson, Massachusetts Institute of Technology
"Digitally Assisted Architectures for RF Transceivers"
2. Boris Murmann, Stanford University
"Overview of Digital Correction Techniques for High-Speed Data Converters"
3. Larry Larson, University of California at San Diego
"Digitally Enhanced RF Circuits”
4. Khurram Muhammed, Texas Instruments
"Software- Assisted Radio Design to Compensate for Analog Impairments and for Interference Effects”
5. Michael P. Anthony, Intersil Corporation
“Mixed Digital/Analog Correction of Mismatch and Process Variability in a Pipeline ADC”

WSL (IMS/RFIC) Sunday 13:00 – 17:00 BCEC Room 153C
State-of-the-Art of Low-Noise III-V Narrow-Bandgap and Silicon FET Technologies for Low-Power Applications [pdf]
Half-day workshop reviewed by MTT-14, MTT-7, MTT-23.

Organizer(s):

Francois Danneville, IEMN-DHS, UMR CNRS, France; MTT-14, IMS TPC.
Paulius Sakalas, CEDIC, Dresden University of Technology, Germany; MTT-14.

This workshop aims to investigate various state-of-the-art low-noise FET technologies for low-power applications: (i) narrow-bandgap III-V HEMTs technologies (on InP or GaAs substrate) (ii) Si CMOS Technology. The first part will focus on InGaAs/InAlAs and Antimonide-Based Compound Semiconductor (ABCS) InAs/AlSb HEMTs. Devices specifically designed to operate at lower DC power consumption, or for low-noise operation, will be presented along with corresponding characterizations (models extraction). Their capability will be shown through ultra-low power MMIC (or hybrid) circuits, including low-noise amplifiers (operating at room and cryogenic temperatures) and switches in cm/mm-wave range. Strengths and limitations of such technologies will also be addressed. The second part will focus on Si CMOS technology. Millimeter-wave LNA will be presented with recent advances concerning CMOS mm-wave building blocks. Special attention will be paid on particular techniques taking advantage of CMOS technology while circumventing its weaknesses. Finally, a new scheme to optimize RF noise of MOSFETs through channel engineering will be described in detail.

Speakers:
1. Jan Grahn, Chalmers University of Technology, Göteborg, Sweden
"Narrow-Bandgap InGaAs/InAlAs and InAs/AlSb HEMTs for Low-Noise and Low-Power Applications"
2. Jonathan Hacker, Teledyne Scientific
"Antimonide Based Compound Semiconductors (ABCS) for Ultra-Low Power Applications"
3. Yasuhiro Nakasha, Fujitsu Ltd.
"InP HEMT (and Si-CMOS) Device and Circuit Design for mm-Wave Low-Noise Applications"
4. Ali Niknejad, University of California - Berkeley
"Recent Advances in CMOS mm-Wave Building Blocks"
5. Francois Danneville, IEMN-DHS, UMR CNRS
"Noise Properties of Low-Power Si MOSFETs Through Different Channel Engineering"

WMA (IMS) Monday 08:00 – 17:00 BCEC Room 151AB
Tunable RF-Components and Modules for Wireless Communication Systems [pdf]
Full-day workshop reviewed by MTT-13, MTT-8, MTT-20

Organizer(s):
Holger Maune, Technische Universität Darmstadt.
Robert Weigel, University of Erlangen-Nuremberg; AdCom, MTT-2, IMS TPC.
Rolf Jakoby, Technische Universität Darmstadt.
Georg Fischer, University of Erlangen-Nuremberg.

This workshop highlights the current research and development efforts in the design and the implementation of reconfigurable RF-frontends for wireless systems, in particular for terrestrial and satellite-based mobile communication. In the first part, it addresses the realization of different tunable components such as phase shifters, filters, duplexers, matching networks. The second part will focus on reconfigurable/adaptive antennas such as beam-steering antennas or reflect-arrays. The presented RF-components and modules are based on different materials such as novel tunable non-linear dielectrics or semiconductors and techniques such as RF-MEMS. Moreover, some of these devices are based on metamaterial design approaches.

Speakers:
1. Robert Weigel, University of Erlangen-Nuremberg
“Frequency Agile Ferroelectric Filters, Power Dividers, and Couplers”
2. Andrew Hunt, nGimat Co.
“Low Voltage and Low Loss Tunable Dielectrics for Phase Shifters/Phased Array Antennas and Tunable Filter Components”
3. Spartak Gevorgian, Chalmers University of Technology
“Agile Ferroelectric Components in EC Project NANOSTAR”
4. Holger Maune, Technische Universität Darmstadt
“Tunable Modules based on Ferroelectric Thick-Film Technology”
5. Georg Fischer, University of Erlangen-Nuremberg
“High-Q Planar Filter Platform Incorporating Macro MEMS Tuning Elements”
6. Christophe Caloz, École Polytechnique de Montréal
“Reconfigurability at Microwaves using Recent Metamaterial Concepts and Techniques”
7. Christian Damm, Technische Universität Darmstadt
“Artificial Lines for Matching Purposes”
8. Luca Marcaccioli, University of Perugia
“Tunable Components for Electronic Beam Steering and Smart Antenna Systems”
9. Etienne Girard, Thales Alenia Space
“MEMS-based Reflectarrays for Satellite Antennas: Design and Prototypes Development at Thales Alenia Space France”
10. Wolfgang Menzel, University of Ulm
“Investigation Methods for Reconfigurable Liquid Crystal Reflectarrays”

WMB (IMS) Monday 08:00 – 17:00 BCEC Room 157C
Parameter Extraction Strategies for Compact Transistor Models [pdf]
Full-day workshop reviewed by MTT-1, IMS09

Organizer(s):
Matthias Rudolph, Ferdinand-Braun-Institut, Germany; MTT-1, MTT-14, IMS TPC.
David Root, Agilent Technologies, USA; MTT-1, IMS TPC.
Christian Fager, Chalmers University, Göteborg, Sweden

“Transistor modeling” often means to circuit designers the determination of the model parameters in order to fit a selected model to a specific device. Parameter extraction and model verification are vital to make theoretically accurate device models practically useful. However, the modeling literature and model documentation usually focus primarily on how the device physics or phenomena are represented in a model, while the question of how the parameters can be determined is often only briefly addressed. It is the aim of this workshop to provide a broad overview of the different techniques and methods of parameter extraction. Rather than discussing individual models, generic strategies will be presented and real-life challenges will be addressed, like the impact of package, temperature and dispersion. It is the purpose of this workshop to provide a comprehensive introduction in order to enable the attendee to successfully deal with devices like GaAs & GaN HEMT, LDMOS, CMOS, GaAs & SiGe HBT.

Speakers:
1. Matthias Rudolph, Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH), Germany
“Introduction to Transistor Model Parameter Extraction”
2. Masaya Iwamoto, Agilent Technologies, Santa Rosa, CA, USA
“DC and Thermal Modeling: III-V FETs and HBTs”
3. Sonja Nedeljkovic, RFMD, Greensboro, NC, USA
“Extrinsic Parameter and Parasitic Elements in III-V HBT and HEMT Modeling”
4. Christian Fager, Chalmers University, Göteborg, Sweden
“Uncertainties in Small-Signal Equivalent Circuit Modeling”
5. David E. Root, Agilent Technologies, Santa Rosa, CA, USA
“The Large-Signal Model: Theoretical and Practical Considerations, Trade-offs, and Trends”
6. Jens Flucke, Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH), Germany
“Modelling of Large Packaged High-Power Transistors”
7. R. Quéré, MITIC/XLIM University of Limoges, France
“Nonlinear Characterization and Modeling of Low Frequency Dispersive Effects in Power Transistors”
8. Dominique Schreurs, KU Leuven, Belgium
“Optimizing (Non-)Linear Measurements for Model Construction and Validation”
9. Pete Zampardi, Skyworks Solutions, Newbury Park, CA, USA
“Practical Statistical Simulation for Efficient Circuit Design”
10. Manfred Berroth, Universität Stuttgart, Germany
“Noise Modeling”

WMC (IMS) Monday 08:00 – 17:00 BCEC Room 153AB
Power Amplifier Linearization: From Advanced Analog and Digital Techniques to Practical Real-Time Implementations [pdf]
Full-day workshop reviewed by MTT-5, MTT-17, MTT-20

Organizer(s):
John Wood, Freescale Semiconductor, Tempe, AZ USA; IMS TPC.
Slim Boumaiza, University of Waterloo, Ontario, Canada.

In RF transmitters, the power amplifier is usually the limiting factor in terms of both the efficiency of the system and the overall linearity. In recent years, as the spectral efficiency of the modulation methods required for communications standards such as WiMAX, LTE, etc. has increased, improvements in the PA efficiency have been wrought by better device technology and circuit & system architectures. While the linearity and efficiency must be traded-off against each other, the communications standards also specify limits of acceptable nonlinearity in terms or error vector and spectral spreading, for instance. The PA or system designer must then include some form of linearizer to meet these specifications. In this workshop we shall present some background for the sources and effects of nonlinear behaviour in RF power amplifiers, including memory effects. A number of approaches for improving the linear performance of the PA when deployed in a transmitter system will be described, including analog linearization methods such as feedforward, feedback and harmonic injection, and various implementations of digital pre-distortion schemes. Peak-to-Average Power Reduction (Crest Factor Reduction) schemes will also be described. Base station and handset PA linearizing techniques will be presented, and both academic and industry approaches will be covered. This will be an advanced workshop, for academics and industry professionals active in RF PA design, and in linearization & DPD development.

Speakers:
1. John Wood, Freescale Semiconductor
“Nonlinear Behaviour & Linearizability of RF Power Amplifiers”
2. Jose Carlos Pedro, University of Aveiro
“Power Amplifier Behavioral Modeling and Linearizer Identification Methods”
3. Anding Zhu, University College, Dublin
“Volterra Series-Based Digital Predistorter Design and Vector Hole Punching for OFDM Signals”
4. Paul Draxler, Qualcomm, Inc. & University of California, San Diego
“Techniques for Envelope Tracking Linearization”
5. R. Neil Braithwaite, Powerwave Technologies
“Crest Factor Reduction (CFR) of Wideband Wireless Multi-Access Signals”
6. Slim Boumaiza, University of Waterloo
“Advanced Memory Polynomial Linearization Techniques”
7. Roland Sperlich. Texas Instruments
“ Digital Pre-distortion Systems and Tradeoffs in Commercial Deployments”
8.R. Neil Braithwaite, Powerwave Technologies
“ Adaptive Feedforward Linearization of Power Amplifiers”
9. Gayle Collins, Freescale Semiconductor
“Linearization using Controlled Harmonic Injection”
10.Kelly Mekechuk, Pulsewave RF
“Direct Digital Predistortion at Radio Frequency via Real-Time Feedback”

WMD (IMS) Monday 08:00 – 17:00 BCEC Room 156AB
Digital Receiver Systems for Defense and Related Commercial Applications [pdf]
Full-day workshop reviewed by MTT-16, MTT-9, IMS09

Organizer(s):
Lamberto Raffaelli, LNX Corporation; MTT-16.
Klaus Breuer, ITT; MTT-16.

The prime motivators for employing digital receivers are functional and performance flexibilities as well as improved system capabilities. The rapid advances of sampling devices, FPGAs, embedded processors, and integrated circuits have expanded the use of digital receivers across a wide range of systems, both in defense and commercial applications, predominantly in communication systems. The technical challenges are in achieving performance requirements for wideband microwave systems, and staying within the size and power restrictions for commercial applications. This workshop will discuss digital receiver applications, implementations, and their challenges. With emphasis on wideband digital receivers as used in defense and radar systems, the discussions will straddle issues that are of interest to many engineers involved in military and commercial systems. The topics will outline applications non-communication signal analysis, radar receivers, signal processing receivers for direction finding, and communication receivers. Requirements and special technical challenges such as sensitivity, dynamic range, noise, bandwidth, signal density, mixed-signal electronics, and power consumption will be defined. Design examples of high-speed wideband sampling techniques, noise reduction themes, and wideband architectures will be given. The status and trends of device and IC technologies that impact the path to the next generation of systems will be provided. There will be allotted time for workshop attendees to engage in open discussions with the presenters.

Speakers:
1. Janusz Majewski, MIT Lincoln Laboratory, USA
“Digital Receiver System Design”
2. Werner Neuhaus, EADS, Germany
“Digital Receiver for Broadband Electronic warfare (EW) Application”
3. Andrea De Martino, Elettronica S.p.A., Italy
”Digital Receiver Applications in Electronic Warfare Systems”
4. Geoff Dawe, Bitwave, USA
“Digital Receivers for Commercial Applications”
5. John Kedziora, Kedziora Innovation Group, USA
“Phase Noise, Jitter, Stability and SNR: Navigating the Lexicon and How to Relate Hardware Measurements to System Performance”
6. Mike Groden, LNX Corporation, USA
“Wideband Receiver with Wideband Track and Hold”
7. Mark Rosker, DARPA, USA
“Advanced Device and Integrated Circuit Technologies for Digital Receivers”
8. Gil Raz, GMR Research & Technology, USA
“Digital Compensation and Exploitation of Nonlinear and Channel Mismatch Errors in Wideband RF Receivers”
9. Fred Harris, San Diego State University, USA
“Applications of Multichannel DSP Modulators and Demodulators”

WME (IMS) Monday 08:00 – 17:00 BCEC Room 153C
Subharmonically Pumped Mixers (SHP mixers): Design Theory and Systems Applications [pdf]
Full-day workshop reviewed by MTT-22, IMS09

Organizer(s):
Kenji Itoh, Mitsubishi Electric; MTT-22, IMS TPC.
Bert Henderson, Cobham Defense Electronic Systems, M/A-Com; MTT-22.

From early years of microwave engineering, the subharmonically pumped (SHP) mixer technique was used for the higher frequency bands because of the lower frequency local oscillator. In addition to this well-known historical fact, the SHP mixer technique is re-focused for new RF applications by its unique nature of spurious mixing products. In this workshop, following technical contents will be presented by experts in this field:

- History of the SHP mixer techniques

- Circuit theory

- Circuit design

- GaAs/Si implementations of SHP mixers

- RF system applications of SHP mixers from cellular phone to THz radio astronomy

Speakers:
1. Edmar Camargo, RF Micro Devices
“History of the Sub-Harmonically Pumped Mixer: from Tubes to CMOS”
2. Stephen Maas, AWR
“Theory of the Subharmonically Pumped Mixers”
3. Bert Henderson, Cobham Defense Electronic Systems, M/A-Com
“SHP mixer Circuit Designs”
4. Kenji Itoh, Mitsubishi Electric
“RF Systems with Even Harmonic Mixers: Unique Spurious Nature”
5. Carlos Saavedra, Queen's University, Canada
“CMOS Subharmonic Mixers and Applications”
6. Tsuneo Tokumits, Eudyna
“Design and Implementation of SHP Mixer in the 3-D MMIC”
7. Erich Schlecht, JPL
“THz SHP Mixers for Planetary, Earth, and Astronomical Observations”
8. Zhiyang Liu, Tyco Electronics
“High-Order Subharmonically Pumped Mixers Using Phased Local Oscillators”

WMF (IMS) Monday 08:00 – 17:00 BCEC Room 157AB
Is GaN Ready for System Insertion? [pdf]
Full-day workshop reviewed by MTT-6, MTT-16, MTT-20

Organizer(s):
Bernie Geller, BDG Consulting Services, , USA; MTT-6, MTT-20, IMS TPC.
Ruediger Quay, Fraunhofer Institute, Freiburg, Germany; MTT-6.
Frank Sullivan, Raytheon Company, Sudbury, MA, USA; MTT-6, MTT-16, IMS TPC.

The significant benefits of power density, efficiency, and bandwidth brought by GaN technology have brought with them substantial system-related issues, such as the need for higher operating voltages, more efficient heat removal techniques, high reliability, and, of course, affordability. These issues have called for innovative solutions not only on the system side, but also in the design, manufacture, packaging, and testing of these devices. The objective of this workshop is both to help GaN component developers understand system issues which will effect their designs and, conversely, tohelp system designers understand both the potentials and limitations of GaN technology in its various forms. We will have eight speakers covering a broad range of topics. The first two speakers, from Cree and Nitronex, deal with the component-level technical status and reliability of GaN discretes and MMICs on both silicon carbide and silicon substrates. The third talk, from RWTH, addresses the status and trends of non-linear modeling of GaN-rf devices. The fourth talk, from the Fraunhofer Institute, discusses the management of power densities with respect to ruggedness and thermal performance. The fifth talk from Alcatel-Lucent deals with the potential of GaN technology in mobile radio communication systems. The sixth and seventh talks, from Rockwell and EADS defense electronics are devoted to military and government system requirements and the application of GaN MMICs in military systems, specifically radar and electronic warfare. The last talk, by Raytheon, will focus on cost and affordability issues. The workshop will conclude with a panel discussion in which the attendees will be asked to submit their questions and comments to the speakers.

Speakers:
1. Ray Pengelly, Cree Inc. Research Triangle Park, NC 27709
“GaN HEMT Technical Status: Transistors and MMICs for Military and Commercial Systems”
2. Kevin Linthicum, Nitronex Corporation, Durham, NC USA
“Status of GaN-on-Silicon for Military and Commercial Communications Systems”
3. R. H. Jansen, RWTH Aachen University
“Advanced Large-Signal Modeling of GaN Power Devices, Electrical, Thermal and Distributed Effects”
4. Rüdiger Quay, Fraunhofer Institute of Applied Solid-State Physics
“Managing Power Density of High-Power GaN Devices”
5. Patrick Jüschke, Alcatel-Lucent Bell Labs Radio Communications
“GaN Technology for Future Mobile Radio Communication from a System Supplier’s Perspective”
6. Mike Wojtowicz, Northrop Grumman
“Status of GaN HEMT Technology for MMW Applications”
7. Patrick Schuh, EADS Defense Electronics, Ulm, Germany
“Using GaN Technology in Military Systems”
8. Colin S. Whelan, Raytheon Company, Andover, MA
“Affordability of Gallium Nitride Technology”
9. Panel Discussion

WMG (IMS) Monday 08:00 – 17:00 BCEC Room 156C
New Component Technologies for Vehicular and Industrial Radar Applications [pdf]
Full-day workshop reviewed by MTT-2, MTT-11, MTT-16

Organizer(s):
Linus Maurer, DICE, Linz, Austria.
Andreas Stelzer, University of Linz, Austria.
Thomas Ußmüller, University of Erlangen-Nuremberg, Germany
Robert Weigel, University of Erlangen-Nuremberg, Germany; AdCom, MTT-2, IMS TPC.

For a long time radar systems were only used for military systems and for civil aviation. One major reason for the limited application scenarios were the high costs involved with these systems. Nowadays the application scenarios are much broader. They range from location-aware smart-sensor systems for industrial applications to automotive systems for enhanced car safety. The recent advances in semiconductor technology have opened new mass-market potentials for radar systems. This workshop will give insights to several aspects of industrial and automotive radar systems. The topics covered during this workshop span from sub-component design to application scenarios. Fully integrated radar frontends in silicon technologies will be shown. Furthermore, challenges and solutions for the integration of these transceiver ICs into complete systems will be addressed. Another important aspect for the complete system is the antenna design, which will be covered by a separate talk. In addition, examples for modern industrial and automotive radar systems will be shown.

Speakers:
1. Dietmar Kissinger, University of Erlangen-Nuremberg, Germany
“High-Linearity 77-GHz SiGe Automotive Radar Front-Ends”
2. Joy Laskar, GEDC at Georgia Tech, Atlanta, USA
“Digital CMOS Phase Shifter Technology for Precision Radar Applications”
3. S.P. Voinigescu, University of Toronto, Canada
“W- and D-Band CMOS and SiGe BiCMOS Radars for Remote Sensing and Industrial Applications”
4.Thomas Ussmueller, University of Erlangen-Nuremberg, Germany
”Concepts and Design Methods of Antennas for Automotive Long Range Radar”
5. Johann-Peter Sommer, Fraunhofer Research Institution, Germany
“FE Simulations and Micro-Range Deformations Measurements – Efficient Tools for Design Support”
6. Johnna Powell, Massachusetts Institute of Technology, Cambridge, USA
“77 and 94-GHz SiGe Receiver Front Ends and Integrated Antennas for Millimeter-Wave Applications”
7. P. Feil, Institute of Microwave Techniques, University of Ulm, Germany
“Broadband Automotive Sensors in Industrial and Security Applications”
8. A. Teplyuk, University of Kiel, Germany
“94-GHz Industrial Radar Sensor for the Quantitative Monitoring of Dust Particles and Aerosoles”

9. A. Stelzer, Johannes Kepler University, Linz, Austria
“FMCW MIMO Radar Concepts based on SiGe Transceivers”

WMH (IMS/RFIC) Monday 08:00 – 17:00 BCEC Room 152
Radio-Frequency Applications of Nanotechnology: Towards a New Generation of Extremely Integrated Devices and Systems [pdf]
Full-day workshop reviewed by MTT-15, MTT-20, MTT-23.

Organizer(s):
Luca Pierantoni, Università Politecnica delle Marche, Ancona, Italy.
Fabio Coccetti, LAAS-CNRS, Toulouse, France.
Manos M. Tentzeris, Georgia Institute of Technology, Atlanta, GA, USA; IMS TPC.

The goal of this workshop is to present research activities on high-performance nanodevices for RF applications, showing the potential offered by emerging nano-scale materials. The latter include carbon nanotubes and graphene nanoribbons that exhibit unique electro-mechanical properties. The topics cover issues from production technology to recent advances in modelling. We describe the development of nano-components such as gas sensors, resonators, nano-antennas arrays, high-frequency interconnects, nano-electro-mechanical switches, nano-plasmonic structures, carbon based transistors and molecular devices for RF nanoelectronics. We focus on experimental techniques for the growing, assembling, positioning, contacting and broadband characterization of nanostructures, thus highlighting recent and emerging solutions. We introduce novel numerical techniques aimed at describing the coupling of Maxwell’s equations with those governing the quantum transport.

Speakers:
1.Fabio Coccetti, LAAS-CNRS, Toulouse, France
“CNT Based Devices for Sensing and Communication Applications”
2. Trang T. Thai, Georgia Institute of Technology, Atlanta, GA, USA
“Carbon Nanotubes and Graphene Nano-Ribbons: Electrical Properties in Wireless Sensing Nodes”
3. Peter Burke, University of California, Irvine CA, USA
“Arrays of SWNT Devices for Analog RF: Overview of the Field”
4. Luca Pierantoni, Università Politecnica delle Marche, Ancona, Italy
“Novel Frequency- and Time-Domain Techniques for the Combined Maxwell-Dirac Problem in the Characterization of Nanodevices”
5. Pavel Kabos, National Institute of Standards and Technology, Boulder, CO, USA
“Broadband Characterization of High Impedance Nanoscale Systems”
6.Paul Salet, Ecole Polytechnique Fédérale de Lausanne, Switzerland
“Carbon Nanotube Nano-Electro-Mechanical Switches”
7. Paolo Lugli, Technische Universitaet Munich, Munich, Germany
“Molecular Devices for RF Nanoelectronics”
8. Erping Li, Singapore National Research Institute, A*STAR-IHPC, Singapore
“Coupling of Maxwell’s and Schrödinger’s Equations for Modeling of Nano-Plasmonic Structures”

9. Tomas Palacios, Massachusetts Institute of Technology, Cambridge, MA USA

"Graphene RF Electronics"

WMI (IMS) Monday 13:00 – 17:00 BCEC Room 154
Gigabit Packaging of Wireless 60GHz Links [pdf]
Half-day workshop reviewed by MTT-12, MTT-20, IMS09

Organizer(s):
Rick Sturdivant, Microwave Packaging Technology; MTT-12.
Robert Jackson, University of Massachusetts, USA; MTT-12, IMS09.
Anh-Vu Pham, University of California-Davis, USA; MTT-12, IMS TPC.

Multi-gigabit communications systems are driving the development of packaging methods for 60GHz. Applications include video transport, medical, high-speed file transfer, wireless networks such as LANs and PANs, and military applications such as secure communication. These systems require high-quality signal paths, low radiation and integrated components such as antennas and baluns. This workshop will focus on packaging issues and examples for 60-GHz high data rate modules and subsystems.

Speakers:
1. S. Tabatabaei, Endwave Corporation
“New Developments and Choices in Low-Cost Packaging for 60-GHz Applications”
2. Konichi Maruhashi, NEC
“Development of mmW modules for gigabit wireless transceivers”
3. J. Laskar, Georgia Tech
“Integrated MMW Module Technology at PCB Price Points”
4. Choudhury, Debabani, Intel
“Packaging Challenges and Opportunities for Multi-Gigabit Applications”
5 . Mike Pettus, VubIQ
“Packaging Solution For 60GHz SiGe Transceivers”

WWA (IMS/RFIC) Wednesday 08:00 – 17:00 BCEC Room 153AB
Integration Trends towards 4G [pdf]
Full-day workshop reviewed by MTT-2, MTT-20, MTT-23

Organizer(s):
Robert Weigel, Universität Erlangen-Nürnberg; AdCom, MTT-2, IMS TPC.
Clemens Ruppel, EPCOS AG; MTT-2, IMS TPC.

4G will not facilitate the design of cell phones. Compared to today's 3G, future 4G multi-standard, multi-band cellular phones have to cover an increasing number of wireless standards. These standards include GSM, CDMA, WCDMA, 3GPP LTE/4G, WIMAX and even MIMO WIMAX AND MIMO LTE/4G at up to 25 frequency bands, and includes connectivity systems like WLAN and Bluetooth, and support navigation systems like GPS and Galileo. Pressure on integration clearly increases. This workshop will highlight all relevant topics in the transceiver value-chain of cell phones. The presentations cover the full range starting with the discussion of architecture issues and transceiver concepts. Reporting on the progress made with CMOS integration follows. Then, in the direction of the chain towards the antenna, flexibility issues are discussed. Finally, novel power amplifier concepts, RF front-end integration, and multi-band antennas are addressed.

Speakers:
1. Aarno Pärssinen, Nokia NRC, Helsinki, Finland
“RF System and Architecture Design Challenges in Multi-mode Mobile Devices in 4G Era”
2. Kyutae Lim and J. Laskar, Georgia Tech, Atlanta, USA
“All Digital Out-Phasing Transmitter (ADOPT) for Multi-band/Multi-standard Applications”
3. A. Hanke, Infineon Technologies, Neubiberg, Germany
“Evolution of Cellular Transceivers in nm CMOS Technologies towards 4G”
4. R. Bogdan Staszewski, TU Delft, The Netherlands
“Trends for Highly Integrated Multi-mode Transceiver Architectures in Nanoscale CMOS”
5. Faraz Ali and R. Gloeckler, Ericsson/University of Erlangen-Nuremberg, Germany
“Trends in Multiband PA”
6. Chafik Meliani and G. Boeck, University of Technology Berlin, Germany
“High Efficiency Broadband/Multiband PAs for Next Generation Transmitters”
7. Pasi Tikka, EPCOS, Munich, Germany
“Future RF Frontend towards 4G”
8. Dirk Manteuffel and I. Wolff, IMST GmbH, Kamp-Lintfort, Germany
”Design Challenges for the Integration of Antennas into 4G Mobile Handsets”

WWB (IMS) Wednesday 08:00 – 12:00 BCEC Room 152
RF Design Components of Magnetic Resonance Scanners [pdf]
Half-day workshop reviewed by MTT-17, IMS09

Organizer(s):
Robert Caverly, Villanova University; MTT-17, IMS TPC.
William Doherty, Microsemi-Lowell Corp.

The tutorial will present material covering the RF design practice used in Magnetic Resonance Scanners with presentations on hardware component design. The workshop will be geared for RF and microwave engineers wishing gain insight into technology as a means to move this important medical imaging forward. The tutorial topics range from brief review of magnetic resonance phenomenon, the need for high field scanning and its related RF components in the VHF region, the need for and design of tightly controlled RF pulse sequence generation, and high efficiency pulse transmitters for faithful reproduction of these well-defined pulse sequences. The tutorial will continue on the weak received signals by reviewing high gain, low noise amplifiers for the MR scanner receiver front end along with the transmit/receive coils as part of the MR transceiver system.

Speakers:
1. Robert Caverly, Villanova University
“An Introduction to MRI”
2. Matthew R. Cummings, Cummings Electronics Labs
“Practical RF Electronics for MRI/NMR Transceivers”
3. Ron Watkins, Stanford University Department of Radiology
”Concepts in MRI RF Transmit”
4. Fritz Raab, Green Mountain Radio Research Company
“High-efficiency Transmitter for Magnetic-resonance Imaging "
5. William Doherty, Microsemi and Ron Watkins, Stanford Univ. Dept. of Radiology
“RF Design Components of Magnetic Resonance Scanners”
6. Patrick Ledden, Nova Medical
“Radio Frequency Detectors for Human Magnetic Resonance Imaging”

WWC (IMS/ARFTG) Wednesday 13:00 – 17:00 BCEC Room 152
Advanced Measurement Techniques, Adapted for Different Memory Effects [pdf]
Half-day workshop reviewed by MTT-11, MTT-1, IMS09, ARFTG09, IMS-S TC33

Organizer(s):
Dominique Schreurs, K.U.Leuven, Belgium; AdCom, TCC, MTT-11, IMS TPC.
Marc Vanden Bossche, NMDG, Belgium.

Memory effects in transistors and amplifiers are troublemakers from the early days. The goal of this workshop is to give an overview of the present state-of-the-art characterization techniques in relation to the different types of memory effects that can occur within transistors and amplifiers. This workshop will provide you with an understanding of the different measurement setups that provide the necessary information to develop, for example, linearization techniques. The first talk focuses on the different memory effects for emerging wideband PA designs and clarifies the importance of an in-depth understanding. Related to these different types of memory effects, the other talks elaborate on the different state-of-the-art measurement techniques to properly characterize and quantify these effects, going from DC via small-signal measurements to large-signal measurements.

Speakers:
1. Nuno Borges Carvalho, IT, Portugal
“Importance of Memory Effects from a Designer Point of View”
2. Leo de Vreede, T.U.Delft, Netherlands
“Large-Signal Device Characterization for Wide-Band PA Applications”
3.Christian Fager, Chalmers University, Sweden
“Electrical Characterization of Self-Heating Effects”
4. Anthony Parker, Macquarie University, Australia
“Measurement and Modeling of FET/HEMT Trapping Dynamics”
5.Christophe Gaquiere, IEMN, France
“Time Domain Analysis of Trapping Effects of AlInN/GaN HEMT Devices”

WWD (IMS) Wednesday 13:00 – 17:00 BCEC Room 151AB
RF MEMS Testing, Reliability, and Power Handling [pdf]
Half-day workshop reviewed by MTT-21, MTT-8, MTT-12

Organizer(s):
John L. Ebel, Air Force Research Laboratory; MTT-21, IMS TPC.
Daniel J. Hyman, XCOM Wireless; MTT-21.

RF MEMS devices continue to demonstrate steady increases in lifetime, reliability, and other critical performance metrics. Reliability issues, however, continue to be the primary impediments to mainstream commercial adoption of these technologies. As a result, potential users of RF MEMS technology have an increased interest both in understanding the methods used by manufacturers to evaluate their devices, and in developing their own methods to evaluate devices for particular applications. In this workshop, reliability and lifetime issues will be addressed and analyzed with respect to various RF MEMS devices, as well as testing and experimentation for the characterization of the electrical and mechanical performance of the devices. Concepts that address several of the present problems and improve the MEMS device performance will also be presented.

Speakers:
1. John Maciel, Radant MEMS
“A High-Reliability, High-Power Ohmic MEMS Switch”
2. Daniel Hyman, XCOM Wireless
“Ohmic-contact RF MEMS Repeatability and Environmental Test Methods”
3. Jeffrey S. Pulskamp, US Army Research Laboratory
“Reliability Testing, Characterization, and Design in Piezoelectric RF MEMS”
4. Jeremy Muldavin, MIT Lincoln Laboratory
“Challenges in and Results from Reliability Testing of Capacitive and DC RF MEMS Switches”
5. George Papaioannou, University of Athens
“Dielectric Charging in MEMS by Material, Structure and Temperature”
6. James Hwang, Lehigh University
“Surface vs. Bulk Charging of the Dielectrics in RF MEMS Capacitive Switches”
7. Steve Patton, University of Dayton Research Institute
”Tribological Challenges in MEMS/NEMS Devices”

WFA (IMS) Friday 08:00 – 17:00 BCEC Room 151B
EM-Based Microwave Optimization Technology: State of the Art and Applications [pdf]
Full-day workshop reviewed by MTT-1, MTT-8, MTT-15

Organizer(s):
John W. Bandler, Bandler Corporation, Canada; MTT-1, IMS TPC.
Slawomir Koziel, Reykjavik University, Iceland.

This workshop addresses the state of the art of EM-oriented CAD technology for effective modeling and optimization of microwave and related circuits. Going beyond conventional approaches, recent advances exploit available adjoint sensitivity information, sophisticated modeling algorithms, multilevel co-simulation, space mapping, and more. Our objective is to assist the microwave engineer in accelerating convergent design solutions while avoiding needless expensive simulations, all without sacrificing EM accuracy. Yet, where possible we take the EM simulator out of the classical optimization loop. We cover the fundamentals, some methodologies, practical applications, and expected trends in research and development. We illustrate the material through RF and microwave designs, antenna designs, photonic device design, and inverse problems for industrial and biomedical applications. We consider exciting new points of view suggested by work on design closure, port tuning, and perfectly calibrated ports. We review the state of artificial neural network modeling and space-mapping-based modeling and optimization, both interacting concurrently with full-wave EM tools. We address macromodeling, mixed linear/nonlinear simulation, and multilevel EM field/circuit co-simulation. We review approaches to image reconstruction through microwave tomography and demonstrate the power of adjoint sensitivity analysis in detecting electrically small scatterers (tumors) as well as in full image reconstruction. We review the latest developments in accelerating EM-based design through adjoint response sensitivities and gradient-based optimization. We discuss adjoint techniques capable of accurately predicting the complete time-domain EM response of perturbed structures, and estimating the sensitivity of the time-domain response with respect to all parameters. A substantial part of the workshop will be tutorial, devoted to introducing the state of the art and explaining to the microwave engineer how existing CAD tools can be taken advantage of, and what to expect in the years ahead. We will present progress in the development of advanced algorithms and user-friendly software. The workshop will also allow state-of-the-art microwave practitioners to review their achievements.

Speakers:
1. Ming Yu, Com Dev, Canada
“Electromagnetic Simulators for The Design of Large Microwave Circuits”
2. Q.J. Zhang, Carleton University, Canada
“Neural Network Inverse Modeling and Applications to Microwave Design”
3. José E. Rayas-Sánchez, ITESO, Mexico
“Neural Space Mapping Approaches to EM-based Statistical Analysis”
4. Natalia K. Nikolova, McMaster University, Canada
“Adjoint Sensitivities in Microwave Imaging and Design Tuning”
5. Mohamed Bakr, McMaster University, Canada
“Efficient Surrogate Model Optimization of High Frequency Structures Exploiting Adjoint Sensitivities and Cauchy Methods”
6. Peter Thoma, CST, Germany
“Complete Technology for Optimizing EM Designs”
7. John Bandler, Bandler Corporation, Canada
“Surrogate Modeling and Space Mapping: The State of The Art”
8. Slawomir Koziel, Reykjavik University, Iceland
“Coarse Models and the Robustness of the Space Mapping Optimization Process”
9. James Rautio, Sonnet Software, USA
“Examples of Microwave Filter Optimization Using Perfectly Calibrated Ports”

WFB (IMS) Friday 08:00 – 17:00 BCEC Room 152
Modern RFID: Inkjet Printing of "Green" RFID and RFID-enabled Sensors on Flexible Substrates [pdf]
Full-day workshop reviewed by IMS09, MTT-16, MTT-20

Organizer(s):
Manos Tentzeris, GEDC/ECE, Georgia Tech; IMS TPC.
Amin Rida, GEDC/ECE, Georgia Tech.
Jan Sumerel, Fujifilm Dimatix.

This workshop presents a step-by-step discussion of the design and development of RFID and RFID-enabled sensors on flexible low-cost substrates for the UHF band and up to microwave frequencies. Various examples of fully function building blocks (design and fabrication of antennas, integration with ICs and microcontrollers, power sources, as well as ink-jet printing techniques) demonstrate the revolutionary effect of this approach in low-cost RFID and RFID-enabled sensors fields. The first part of the workshop will demonstrate the state-of-the-art inkjet printing techniques focusing on the novelty of digital printing, next generation and mass production of inkjet printing while giving several examples and guidelines. The second part will focus on the “first green RFID-enabled sensor”, battery-less long-range RFID modules, and current problems in design/measurements of RFID-enabled sensors that make extensive use of power scavengers of renewable energy sources.

Speakers:
1. Paul Calvert, University of Massachusetts-Dartmouth, USA
“Reactive Inkjet Printing of Electronic Materials”
2. Amin Rida, GEDC/ECE Georgia Tech, Toyota TTC
”Modern RFID: Inkjet Printing of "Green" RFID & RFID Enabled Sensors on Flexible Substrates Conductive Ink-Jet Printed Antennas & Passives on Flexible Organics for RFID & WSN”
3. Dimitrios Anagnostou, South Dakota School of Mines and Technology, Rapid City, USA
“Green” Antennas Beyond RFIDs”
4. Li Yang, Georgia Institute of Technology, Atlanta, USA
“Green” RFID-Enabled Wearable Sensors”
5. Edward Gebara, Georgia Institute of Technology, Atlanta, USA
“Anti-Counterfeit Technology for RFID Applications”
6. Tohru Asami, The University of Tokyo, Bunkyo-ku, Japan
“Toward Energy Harvesting for Wireless Sensor Networks”
7. Leila Deravi, Vanderbilt University
“Progress Towards Inkjet Printed Metal Particle Films as Potential Memory Storage Devices”

WFC (IMS) Friday 08:00 – 17:00 BCEC Room 156C
Recent Advances in Microwave Power Applications and Techniques (RAMPAnT) [pdf]
Full-day workshop reviewed by MTT-15, MTT-1, IMS09

Organizer(s):
Malgorzata Celuch, Warsaw University of Technology, Poland; IMS TPC.
Vadim V. Yakovlev, Worcester Polytechnic Institute, USA.

The RAMPAnT workshop presents an overview of current and emerging microwave energy applications in science and industry. It also exposes the MTT community to the recent advancements in electromagnetic modeling techniques relevant to high-power microwave processes, computer-aided optimization of microwave heating systems, experimental studies in material processing, imaging and measurements for high-power microwave scenarios, and developments of new industrial microwave technologies. Contemporary applications of microwave power span an increasing number of research and industrial sectors. Beyond widely known microwave heating and thawing of food products, they include sintering of particulate materials, powder metallurgy and metal casting, microwave plasma generation and acceleration of chemical reactions, manufacturing of nanomaterials, processing of biocompatible alloys, and surface coating of polymers. All of the quoted topics are represented in the workshop program. While on the fundamental level, microwave power applications deal with the same electromagnetic laws as conventional telecommunications, the multidisciplinary field of high power engineering has been historically staying somewhat aside the developments in the “traditional” electromagnetics. As a consequence, this field remains beyond the main scope of interests of the IEEE MTT Society. The RAMPAnT Workshop aims to bring the communities of “classical” and “high power” microwave theory and techniques closer to each other with the hope to initiate information exchange and to identify the areas of common concerns that could be jointly addressed by the experts of both parties.

Speakers:
1.Paolo Veronesi, University of Modena and Reggio Emilia, Modena, Italy
“Control of the Microstructure of Powder Metallurgy Products by Microwave Heating”
2. Aly E. Fathy, University of Tennessee, Knoxville, TN, USA
“Electromagnetic and Thermal Analysis of High Power Industrial Microwave Ovens for Metal Casting Applications”
3. Sébastien Vaucher, Swiss Federal Laboratories for Materials Testing and Research, Thun, Switzerland
“Time-Resolved Imaging of Material Changes Under Microwave Irradiation”
4. Wojciech K. Gwarek, Warsaw University of Technology, Warsaw, Poland
“Modeling and Measurements of Susceptors for Microwave Heating Applications”
5. José M. Catalá-Civera, Technical University of Valencia, Valencia, Spain
“Advanced Microwave Measurements for High-Power Applications”
6. Monika Willert-Porada, University of Bayreuth, Bayreuth, Germany
“Parameter Analysis of Atmospheric Microwave Plasma Generation in Fluidized Beds”
7. Matthias Graf, Fraunhofer Institute for Chemical Technology, Pfinztal, Germany
“FEM Simulation of Microwave Plasma”
8. Vadim V. Yakovlev, Worcester Polytechnic Institute, Worcester, MA, USA
“Efficient Techniques of ANN-Based Microwave Imaging in Closed Systems”
9. Yoshio Nikawa, Kokushikan University, Tokyo, Japan
“Microwave Power Applications to Metamaterials and Measurement of Complex Permittivity under NMR Temperature Mapping”
10. Lambert Feher, Forschungszentrum, Karlsruhe, Germany
“Microwave Quantum Interactions for Polymer and Composite Curing”

WFD (IMS) Friday 08:00 – 17:00 BCEC Room 153AB
Emerging Applications of RF-MEMS [pdf]
Full-day workshop reviewed by MTT-21, MTT-8, IMS09

Organizer(s):
Pierre Blondy, XLIM - CNRS - Université de Limoges; MTT-21, MTT-8, IMS TPC.
Gabriel Rebeiz, University of California at San Diego; MTT-21, IMS TPC.

RF-MEMS are entering a maturing phase, where several companies are currently developing or proposing components that can be integrated into microwave systems. The workshop will first address the system level applications in an introductory talk, followed by the presentation of the latest results and development of several industrial switches. The technical development of high reliability RF-MEMS switches for microwave applications will be discussed in detail, from several developing companies in the US and Europe. In the afternoon, the workshop will focus on academic development and new and emerging areas in the field. Recent advances in high-Q tunable microwave cavities will be presented, with the latest results from US and Europe.

Speakers:
1. Brandon Pillans, Raytheon
“Defense Applications of RF MEMS Technology”
2. Julio Costa, RFMD
“RF-MEMS Switch Technology for Radio Front End Applications”
3. Jeroen Bielen, EPCOS Netherlands
“RF-MEMS Design for Reliability in Smart RF Communication Systems”
4. Tauno Vaha Heikkila, VTT Finland
“Reconfigurable RF MEMS Tuning Networks from Handset to Millimeter Wave Applications”
5. Art Morris, wiSpry
“Tunable RF Modules for Mobile Applications”
6. Matthieu Chatras, XLIM - CNRS - Université de Limoges
“Development of High-Q MEMS Tunable Filters”
7. Dimitrios Peroulis, Purdue University
“Evanescent Cavity-Based Tunable RF MEMS Filters”
8. Gabriel Rebeiz, University of California at San Diego
“Development of High-Q Evanescent Mode Tunable Filters and Planar Ceramic Tunable Filters for 1.5-6.0GHz Applications”
9. Raafat Mansour, University of Waterloo
“Realization and Design of High-Q Tunable Filters”

WFE (IMS) Friday 08:00 – 12:00 BCEC Room 156A
Stability of Nonlinear Microwave Circuits and Systems: Concepts, Analysis, and Design [pdf]
Half-day workshop reviewed by MTT-16, MTT-1, MTT-6

Organizer(s):
Christopher P. Silva, The Aerospace Corporation; MTT-16.
Almudena Suárez, University of Cantabria; IMS TPC.

This workshop provides a comprehensive and practical treatment of the general nonlinear stability problem that arises in essentially all modern microwave circuits and systems. It is motivated by the fact that current analysis and design practices are inadequate at mapping out the full behavior of a given circuit or system, thereby leading to the possibilities of anomalous unstable behaviors or designs with marginal stability. There are several important instances, ranging from commercial to military arenas, in which this inadequacy has resulted in costly consequences and delays. As performance demands increase, this problem will become more commonplace as implementation complexity increases and design margins decrease. The workshop will address the three basic aspects of this subject: concepts, analysis, and design applications. The treatment here will be fundamentally based on the dynamical system paradigm and will address local, global, and input/output stability. An introduction to the dynamical system framework will first be provided, including a detailed definition and classification of the steady-state behavior of these systems and their stability (linear and nonlinear) that will encompass and generalize current stability criteria commonly used in practice (e.g., stability factors). The concept of bifurcation, or stability change, will be introduced, together with a survey of the wide variety of forms (and routes) that this phenomenon can manifest itself. The next portion of the workshop will address the important detection and analysis of bifurcations in microwave circuits and systems, including two fundamental approaches that have been implemented either as a modification to currently available CAD platforms (e.g., Agilent ADS), or as stand-alone specialized software packages. The important technique of bifurcation control will also be described that allows for the development of robustly stable designs. With these tools in place, a representative and relevant set of applications will be covered, including such common circuits and systems as oscillators, power amplifiers, frequency dividers, self-oscillating mixers, frequency multipliers and phase-locked loops. In addition, special attention will be paid to parametric circuits, as they can still be advantageously used to implement several important nonlinear functions. Their operation principle, based on the periodic variation of a nonlinear reactance, helps in the understanding of common parametric instabilities found in nonlinear microwave circuits. The serious and still unresolved problem of instabilities in multi-device circuits, such as multi-function MMIC chips, will also be addressed, presenting available techniques to locate the instabilities in large, complex-topology circuits. Attendants of this workshop should come away with a new area of knowledge and tool set that will allow them to completely analyze the stability of th eir current designs, and make future ones more robustly stable in their behavior.

Speakers:
1. Christopher P. Silva, The Aerospace Corporation, USA
“Overview of Steady-State Stability Concepts and Analysis for Microwave Circuits & Systems”
2. Almudena Suárez, University of Cantabria, Spain
“Bifurcation Analysis and Control in Nonlinear Microwave Circuits”
3. Juan Mari Collantes, University of the Basque Country, Spain
“Expanding the Capabilities of Pole-Zero Identification Techniques for Stability Analysis”
4. Diego Masotti, University of Bologna, Italy
“ Global Stability Analysis of Nonlinear Microwave Circuits Based on Numerical Implementation of Bifurcation Theory”
5. Sebastien Mons, University of Limoges — CNRS, France
“Stability Issues in the Design of High Power Amplifiers and Oscillators”
6. Robert Melville, USAP, McMurdo Station, USA
“Theory and Applications of Strong Parametric Excitation”